the basic principle of sputtering coating is to bombard the surface of the target with particles with high enough energy, so that the atoms in the target are "sputtered" and deposited on the substrate to form a film. usually, gas discharge is used to generate gas ionization, and its positive ions bombard the target as the cathode at a high speed under the action of an electric field, knock out the atoms or molecules of the cathode target, and fly to the surface of the substrate to be deposited into a thin film. the technological development trend of target materials is closely related to the development trend of thin film technology in the downstream application industry.
in the semiconductor industry, tungsten (w) thin films are mainly used as a material constituting electronic parts (eg, gate electrodes or wiring materials) in a w—al substrate.
in recent years, the microelectronics and semiconductor industries have developed rapidly. since these electronic parts require high integration, high reliability, high functionality, and high-speed processing, in order to meet these needs, it is crucial to reduce the resistance of thin-film materials. w plays a significant role in metal-to-metal isolation in gate and interconnect metallization. tungsten has low resistance and is also excellent in heat resistance. tungsten has attracted widespread attention from semiconductor engineers as a material for electrodes and wires
the high-purity tungsten target produced by xiamen honglu is used in the preparation of physical vapor deposition (pvd). the number of particles produced during the sputtering process is small, the obtained film has high uniformity and excellent electrical properties, which can perfectly meet the requirements of the semiconductor industry. the ultimate pursuit of materials.